| PART |
Description |
Maker |
| SP8782 SP8782A SP8782ADG SP8782BMP DES9208901AC DE |
6.0V; 1GHz 16/17, 32/33 multi-modulus divider
1GHz ± 16/17, ±32/33 Multi-Modulus Divider 1GHz的16/17，32/33多模数分频器
TV 4C 4#16 PIN WALL RECP 1GHz的16/17，32/33多模数分频器
1GHz 16/17/ 32/33 Multi-Modulus Divider
1GHz 16/17 / 32/33 Multi-Modulus Divider
1GHz 16/17 32/33 Multi-Modulus Divider
1GHz 16/17, 32/33 Multi-Modulus Divider
1GHz 梅 16/17, 梅32/33 Multi-Modulus Divider
1GHz ÷ 16/17, ÷32/33 Multi-Modulus Divider
|
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| KH600 KH600AI |
1GHz, Differential Input/Output Amplifier
|
Fairchild Semiconductor
|
| SY89828LHY SY89828L |
3.3V 1GHz DUAL 1:10 PRECISION LVDS FANOUT BUFFER/TRANSLATOR WITH 2:1 INPUT MUX
|
MICREL[Micrel Semiconductor]
|
| D2031UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| BF1012S Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| ADSP-BF608 ADSP-BF609 ADSP-BF607 |
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for VGA Video Analytics
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for HD Video Analytics
Blackfin Dual-Core Processor up to 1GHz for High Performance Digital Signal Processing Applications
|
Analog Devices
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| ADG918BCP ADG919BCP ADG919 ADG918 ADG918BRM ADG919 |
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches 宽带，四三分贝隔GHz时的CMOS 1.65 V.75V的，2:1复用/ SPDT开
Wideband 43dB Isolation 1GHz CMOS 1.65 V to 2.75V 2:1 Mux/SPDT Switches
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
|
Analog Devices, Inc.
AD[Analog Devices]
|
| KH104 |
DC to 1.1GHz Linear Amplifier
|
Cadeka
|
